STC503D
STC503D is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Power Transistor General Purpose application
- Low saturation voltage : VCE(sat)=0.4V Typ.
- High Voltage : VCEO=65V Min.
TO-252
Ordering Information
Type NO. STC503D Marking STC503 Package Code TO-252
Absolute Maximum Ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature
- : Single pulse, tp= 300 ㎲ Characteristic Thermal resistance Junction-ambient Thermal resistance Junction-case Symbol Rth(J-a) Rth(J-c) Typ. Max 125.0 12.5
Symbol
VCBO VCEO VEBO IC ICP- PC(Ta= 25°C) PC(TC= 25°C) Tj Tstg
Rating
80 65 5 3 6 1 10 150 -55~150
[Ta=25℃] Unit
V V V A(DC) A(Pulse) W W °C °C Unit ℃/W ℃/W
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO ICBO IEBO h FE
- VBE(ON) VCE(sat) f T Cob
Test Condition
IC=1m A, IB=0 VCB=65V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=0.5A IC=2A, IB=0.2A VCB=5V, IC=50m A VCB=10V, IE=0, f=1MHz
Min.
65 300
- Typ. Max.
0.7 0.4 250 15 50 50 500 1 1
- Unit
V μA μA V V MHz p F
- h FE rank : 300~500 Only KSD-T6O026-000 1
Free Datasheet http://../
Electrical Characteristic Curves
Fig. 1 PC
- Ta
Fig. 2 IC
-...