Download STC503D Datasheet PDF
Kodenshi AUK Group
STC503D
STC503D is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features - Power Transistor General Purpose application - Low saturation voltage : VCE(sat)=0.4V Typ. - High Voltage : VCEO=65V Min. TO-252 Ordering Information Type NO. STC503D Marking STC503 Package Code TO-252 Absolute Maximum Ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature - : Single pulse, tp= 300 ㎲ Characteristic Thermal resistance Junction-ambient Thermal resistance Junction-case Symbol Rth(J-a) Rth(J-c) Typ. Max 125.0 12.5 Symbol VCBO VCEO VEBO IC ICP- PC(Ta= 25°C) PC(TC= 25°C) Tj Tstg Rating 80 65 5 3 6 1 10 150 -55~150 [Ta=25℃] Unit V V V A(DC) A(Pulse) W W °C °C Unit ℃/W ℃/W Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO h FE - VBE(ON) VCE(sat) f T Cob Test Condition IC=1m A, IB=0 VCB=65V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=0.5A IC=2A, IB=0.2A VCB=5V, IC=50m A VCB=10V, IE=0, f=1MHz Min. 65 300 - Typ. Max. 0.7 0.4 250 15 50 50 500 1 1 - Unit V μA μA V V MHz p F - h FE rank : 300~500 Only KSD-T6O026-000 1 Free Datasheet http://../ Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC -...