Download STC503F Datasheet PDF
Kodenshi AUK Group
STC503F
STC503F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features - Power Transistor General Purpose application - Low saturation voltage : VCE(sat)=0.4V Typ. - High Voltage : VCEO=65V Min. SOT-89 Ordering Information Type NO. STC503F Marking C503 YWW Package Code SOT-89 Absolute Maximum Ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature - : Single pulse, tp= 300 ㎲ - - : When mounted on ceramic substrate(250 ㎟×0.8t) Symbol VCBO VCEO VEBO IC ICP- PC PC - - Rating 80 65 5 3 6 0.5 1 150 -55~150 [Ta=25℃] Unit V V V A(DC) A(Pulse) W W °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO h FE - VBE(ON) VCE(sat) f T Cob Test Condition IC=1m A, IB=0 VCB=65V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=0.5A IC=2A, IB=0.2A VCB=5V, IC=50m A VCB=10V, IE=0, f=1MHz Min. 65 300 - Typ. Max. 0.7 0.4 250 15 50 50 500 1 1 - Unit V μA μA V V MHz p F - h FE rank : 300~500 Only KSD-T5B024-000 1 Free Datasheet http://../ Electrical Characteristic Curves Fig. 1 PC -...