1N60PW
1N60PW is Silicon Schottky Barrier Diode manufactured by KUU.
Features
- Metal silicon junction, majority carrier conduction
- Ideal for used in detection or for switching on the radio, TV, etc.
MECHANICAL DATA
- Case: SOD-123
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight:16mg/0.00056oz
Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current Surge Forward Current Forward Current at VF<1V Reverse Current at VR=10V Total Capacitance at f=1MHz,VR=1V Rectification efficiency at Vi = 2 VRMS, R = 5 KΩ Junction Temperature Storage Temperature Range
IFM Isurge
IF IR Ctot η Tj Tstg
PINNING
DESCRIPTION
Cathode
Anode
Top View Marking Code: L60 Simplified outline SOD-123 and symbol
1N60PW 45 20 50 150 500 4 50 38 55 125
-55 ~ +150
Units V V m A m A m A m A u A p F % °C °C
Average Forward Current (m A) Instaneous Reverse Current ( μA)
Fig.1 Forward Characteristics
30 25 20 15 10 5 0.00
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Voltage (V)
Fig.2 Typical Reverse Characteristics 200
0...