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1N60PW - Silicon Schottky Barrier Diode

General Description

1 Cathode 2 Anode 2 1 Top View Marking Code: L60 Simplified outline SOD-123 and symbol 1N60PW 45 20 50 150 500 4 50 38 55 125 -55 ~ +150 Units V V mA mA mA mA uA pF % °C °C Average Forward Current (mA) Instaneous Reverse Current ( μA) Fig.1 Forward Characteristics 30 25 20 15 10 5 0.00 0

Key Features

  • Metal silicon junction, majority carrier conduction.
  • Ideal for used in detection or for switching on the radio, TV, etc.

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Datasheet Details

Part number 1N60PW
Manufacturer KUU
File Size 309.14 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet 1N60PW Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Schottky Barrier Diode FEATURES • Metal silicon junction, majority carrier conduction • Ideal for used in detection or for switching on the radio, TV, etc. MECHANICAL DATA ▪Case: SOD-123 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.