• Part: 1N60PW
  • Description: Silicon Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: KUU
  • Size: 309.14 KB
Download 1N60PW Datasheet PDF
KUU
1N60PW
1N60PW is Silicon Schottky Barrier Diode manufactured by KUU.
FEATURES - Metal silicon junction, majority carrier conduction - Ideal for used in detection or for switching on the radio, TV, etc. MECHANICAL DATA - Case: SOD-123 - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight:16mg/0.00056oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Parameter Symbols Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Forward Current at VF<1V Reverse Current at VR=10V Total Capacitance at f=1MHz,VR=1V Rectification efficiency at Vi = 2 VRMS, R = 5 KΩ Junction Temperature Storage Temperature Range IFM Isurge IF IR Ctot η Tj Tstg PINNING DESCRIPTION Cathode Anode Top View Marking Code: L60 Simplified outline SOD-123 and symbol 1N60PW 45 20 50 150 500 4 50 38 55 125 -55 ~ +150 Units V V m A m A m A m A u A p F % °C °C Average Forward Current (m A) Instaneous Reverse Current ( μA) Fig.1 Forward Characteristics 30 25 20 15 10 5 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Voltage (V) Fig.2 Typical Reverse Characteristics 200 0...