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1N60PW - Silicon Schottky Barrier Diode

General Description

Dim.

Millimeter(mm) Min.

Max.

Key Features

  • s.
  • Metal silicon junction, majority carrier conduction.
  • Ideal for used in detection or for switching on the radio, TV, etc. 1N60PW SOD-123 Pinning 1.Cathode 2.Anode 1 2 SOD-123 Marking Code 1N60P W FM.
  • Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Parameter Symbols Peak Reverse Voltage VRM Reverse Voltage VR Average Rectified Output Current IO Peak Forward Current Surge Forward Current Forward Cu.

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Datasheet Details

Part number 1N60PW
Manufacturer Youfeng
File Size 1.60 MB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet 1N60PW Datasheet

Full PDF Text Transcription (Reference)

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■Silicon Schottky Barrier Diode ■ Features ● Metal silicon junction, majority carrier conduction ● Ideal for used in detection or for switching on the radio, TV, etc. 1N60PW SOD-123 Pinning 1.Cathode 2.Anode 1 2 SOD-123 Marking Code 1N60P W FM ■ Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.