1N60PW
1N60PW is Silicon Schottky Barrier Diode manufactured by Youfeng.
ures
- Metal silicon junction, majority carrier conduction
- Ideal for used in detection or for switching on the radio, TV, etc.
1N60PW SOD-123
Pinning
1.Cathode
2.Anode
SOD-123
Marking Code
1N60P W
- Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current Surge Forward Current Forward Current at VF=1V Reverse Current at VR=10V Total Capacitance at f=1MHz,V=-1V Rectification efficiency at Vi = 2 VRMS, R = 5 KΩ Junction Temperature Storage Temperature Range
IFM Isurge
IF IR Ctot η Tj Tstg
1N60PW 45 20 50 150 500 4 50 1 55 125
-55 ~ +150
Units V V m A m A m A m A u A p F ％ °C °C
.yfwdiode.
Rev:BDI
1/4
Guang Dong Youfeng Microelectronics Co,Ltd.
Average Forward Current (m A)
1N60PW SOD-123
Fig.1 Forward Characteristics...
