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WPM2015-3/TR
P-Channel 20-V(D-S) MOSFET
V(BR)DSS -20 V
RDS(on)MAX 110mΩ@ -4.5V 150mΩ@ -2.5V
ID -2.4A
FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design ● Extremely Low Threshold Voltage
● Excellent ON resistance for higher DC current
MARKING
Equivalent Circuit
APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter
※ Power Switch
WT1 = Device Code * = Month (A~Z)
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Diode Curren Power Dissipation Thermal Resistance from Junction to Ambient (t≤10s) Operating Junction Storage Temperature
Symbol
VDS VGS
ID IDM PD RθJA TJ TSTG
1.GATE 2.SOURCE 3.DRAIN
Value
-20 ±8 -2.4 -10 1.
WPM2015-3 Datasheet
