Datasheet Summary
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V
Descriptions
The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2015 is Pb-free and Halogen-free.
Http://.sh-willsemi.
SOT-23
D 3
Pin configuration (Top view)
Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Application...
