WPM2015 Datasheet
WPM2015 Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Features ● VDS (V) =-20V ● ID =-2.4 A ● RDS(ON) ＜ 110mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) ● Supper high density cell design +0.12.4 -.
* VDS (V) =-20V
* ID =-2.4 A
* RDS(ON) ＜ 110mΩ (VGS =-4.5V)
* RDS(ON) ＜ 150mΩ (VGS =-2.5V)
* Supper high density cell design
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
D 3
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01.
WPM2015 Datasheet (WillSEMI)
WillSEMI
The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-.
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging 3 WT1* 1 2 .