Datasheet Summary
Single P-Channel, -20V, -0.73A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.480@ VGS=̢4.5V 0.620@ VGS=̢2.5V 0.780@ VGS=̢1.8V
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Descriptions
SOT-523
The WPM2019 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2019 is Pb-free and Halogen-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523
Applications z Driver for...