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WPM2014 - Single P-Channel Power MOSFET

General Description

The WPM2014 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • DFN2x2-6L D DS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54.
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package DFN2x2-6L.

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Datasheet Details

Part number WPM2014
Manufacturer WillSEMI
File Size 313.27 KB
Description Single P-Channel Power MOSFET
Datasheet download datasheet WPM2014 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) -20 Rds(on) (Ω) 0.050 @ VGS=–4.5V 0.063 @ VGS=–2.5V 0.074 @ VGS=–1.8V Descriptions The WPM2014 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2014 is Pb-free. Features DFN2x2-6L D DS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2x2-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.