Datasheet Summary
Single P-Channel, -20V, -4.9A, Power MOSFET
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VDS (V) -20
Rds(on) (Ω) 0.050 @ VGS=- 4.5V 0.063 @ VGS=- 2.5V 0.074 @ VGS=- 1.8V
Descriptions
The WPM2014 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2014 is Pb-free.
Features
DFN2x2-6L
D DS 6 54
1 23 D DG Pin configuration (Top view)
6 54
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small...