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1N4150W - SMALL SIGNAL DIODES

Key Features

  • Silicon Epitaxial Planar Diode Fast general purpose and switching. This diods is also available in other case styles including: the DO-35 case with the type designation 1N4150 and the Mini-MELF case with the type disignation LL4150. SOD-123 2.7+0.1 -0.1 Unit: mm 1.1+0.05 -0.05 3.7+0.1 -0.1 0.50 0.35 0.1max +0.050.1 -0.02 Absolute Maximum Ratings Ta = 25 Paramater Symbol Peak Reverse voktage VRM Maximum Average Rectified Current Io Maximum Power Dissipation at Tamb = 25 Ptot Maximu.

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SMD Type SMALL SIGNAL DIODES 1N4150W Diodes +0.10.55 -0.1 +0.11.6 -0.1 Features Silicon Epitaxial Planar Diode Fast general purpose and switching. This diods is also available in other case styles including: the DO-35 case with the type designation 1N4150 and the Mini-MELF case with the type disignation LL4150. SOD-123 2.7+0.1 -0.1 Unit: mm 1.1+0.05 -0.05 3.7+0.1 -0.1 0.50 0.35 0.1max +0.050.1 -0.02 Absolute Maximum Ratings Ta = 25 Paramater Symbol Peak Reverse voktage VRM Maximum Average Rectified Current Io Maximum Power Dissipation at Tamb = 25 Ptot Maximum Forward Voltage Drop at IF = 200mA VF Maximum Reverse Current at VR = 50 V IR Maximum Reverse Recovery Time at IF = 10 to 200 mA, to 0.