1N4150W-V Datasheet | Vishay

FEATURES - Silicon epitaxial planar diode - For general purpose and switching - This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the Mini MELF case with the type designation LL4150. - AEC-Q101 qualified - Material categorization: For definitions of pliance please see .vishay./doc?99912 PARTS TABLE PART ORDERING CODE 1N4150W-V-GS18 or 1N4150W-V-GS08 TYPE MARKING A4 INTERNAL CONSTRUCTION Single diode REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Repetitive peak reverse voltage Maximum average forward rectified current Maximum power dissipation (1) VRRM IF(AV) Ptot VALUE 50 200 410 UNIT V m A m W THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) Rth JA Maximum junction temperature Tj Storage temperature range Tstg Note (1) Valid provided that electrodes are kept at ambient temperature. VALUE 375 150 - 65 to + 150 UNIT K/W °C °C Rev. 1.3, 27-Jul-12 Document Number: 85720 For technical questions within your region: Diodes Americas@vishay., Diodes Asia@vishay., Diodes...