1SS303 Datasheet | Kexin Semiconductor

Features Low capacitance: Ct = 2.5 p F TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. Absolute M axim um R atings T a = 25 Param eter P eak R everse V oltage D C R everse V oltage Surge Current (1 s) Note 1 Surge Current (1 s) Peak Forward Current Note 1 Peak Forward Current A verage R ectified C urrent (N ote 1) A verage R ectified C urrent Junction Tem perature Storage Tem perature Range Junction to A m bient (N ote 1) Junction to A m bient N o te 1.B oth diodes loaded sim ultaneously. Sym bol VRM VR IFSM IFSM IFM IFM IO IO Tj T stg R th ( j-a ) R th ( j-a ) R ating 75 50 6.0 4.0 450 300 150 100 150 -55 to +150 1.0 0.85 U nit V V A A m A m A m A m A /m W /m W Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF(1) VF(2) VF(3) IR(1) Ct trr Test Conditions IF = 1 m A IF = 50 m A IF = 100 m A VR = 50 V VR = 0, f = 1.0 MHz Min Typ Max Unit 4.0 p F 4.0 ns Marking Marking A4 .kexin..cn...