1SS303 Description
DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE.
1SS303 Key Features
- Low capacitance: Ct = 2.5 pF TYP
- High speed switching: trr = 4.0 ns MAX
1SS303 is SILICON EPITAXIAL DOUBLE DIODE manufactured by Renesas.
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS303 | HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE |
DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE.