1SS303
1SS303 is SILICON EPITAXIAL DOUBLE DIODE manufactured by Renesas.
FEATURES
- Low capacitance: Ct = 2.5 p F TYP.
- High speed switching: trr = 4.0 ns MAX.
- Wide applications including switching, limitter, clipper.
- Double diode configuration assures economical use.
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1 1.25±0.1
ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage
DC Reverse Voltage
Surge Current (1 µs) Note
IFSM
Surge Current (1 µs)
IFSM
Peak Forward Current Note
Peak Forward Current
Average Rectified Current Note
Average Rectified Current
Maximum Temperatures
Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance Junction to Ambient Note
Rth(j-a)
Junction to Ambient
Rth(j-a)
Note Both diodes loaded simultaneously.
450 m A
300 m A
150 m A
100 m...
