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1SS345 - Sillicon Epitaxial Schottky Barrier Diode

Key Features

  • Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection efficiency(VF=0.35V max) High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS345-applied sets to be made small and slim. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maxim um Ratings Ta = 25 P aram eter Reverse Voltage Forward Current Power Dissipation Junction Tem perature.

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Part Number Description
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SMD Type Sillicon Epitaxial Schottky Barrier Diode 1SS345 Diodes Features Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection efficiency(VF=0.35V max) High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS345-applied sets to be made small and slim. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maxim um Ratings Ta = 25 P aram eter Reverse Voltage Forward Current Power Dissipation Junction Tem perature Storage temperature Reverse Burning C = 25 pF Sym bol VR IF P Tj T stg Bo Value 55 10 150 125 -55 to +125 2 Unit V mA mW erg 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.