Datasheet Summary
SMD Type
Sillicon Epitaxial Schottky Barrier Diode 1SS345
Diodes
Features
Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection efficiency(VF=0.35V max) High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS345-applied sets to be made small and slim.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maxim um Ratings Ta = 25
P aram eter Reverse Voltage Forward Current Power Dissipation Junction Tem perature Storage temperature Reverse Burning
C = 25 pF
Sym bol VR IF P Tj T stg Bo
Value 55 10 150 125
-55 to +125 2
Unit V mA...
