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1SS345 - Sillicon Epitaxial Schottky Barrier Diode

Key Features

  • Small interterminal capacitance (C=0.45pF typ).
  • Low forward voltage and excellent detection efficiency (VF=0.35V max).
  • High breakdown voltage (VR=55V).
  • Very small-sized package permitting the 1SS345applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS345] 1:Anode 2:No connection 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperatu.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
1SS350 Sillicon Epitaxial Schottky Barrier Diode
1SS351 Sillicon Epitaxial Schottky Barrier Diode
1SS358 Schottky Barrier Diode
1SS365 Schottky Barrier Diode
1SS366 Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number :EN3157B 1SS345 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitance (C=0.45pF typ). · Low forward voltage and excellent detection efficiency (VF=0.35V max) · High breakdown voltage (VR=55V). · Very small-sized package permitting the 1SS345applied sets to be made small and slim.