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2KK5106 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 650V.
  • ID = 3A.
  • RDS(ON) < 1.4ʃ @ VGS = 10V,ID = 3.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness TO-252 D MOSFET 23 1 G S 1. Gate (G) 2. Drain (D) 3. Source (S).
  • Absolute Maximum Ratings (TC = 25℃, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 2) Avalanche Energy, Single Pulsed (No.

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SMD Type N-Channel MOSFET 2KK5106 ■ Features ● VDS (V) = 650V ● ID = 3A ● RDS(ON) < 1.4ʃ @ VGS = 10V,ID = 3.0A ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability, high ruggedness TO-252 D MOSFET 23 1 G S 1. Gate (G) 2. Drain (D) 3. Source (S) ■ Absolute Maximum Ratings (TC = 25℃, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 2) Avalanche Energy, Single Pulsed (Note 3) Avalanche Energy, Repetitive, Limited by TJMAX Peak Diode Recovery dv/dt (Note 4) Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.