Kexin Electronics 2KK5113
N-Channel MOSFET
| Part No. | 2KK5113 |
|---|---|
| Datasheet | 2KK5113 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 650 V● ID = 11 A
● RDS(ON) ＜ 360mΩ @ VGS = 10V
● Low FOM RDS(ON) X QG
● Better EMI
● 100% UIS tested TO-252 D MOSFET 23 1
●
APPLICATIONS
● Switch Mode Power Supply (SMPS)● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC) G S 1. Gate (G) 2. Drain (D) 3. Source (S)
●
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain Current - Continuous (Note 1) Drain Current - Pulsed (Note 2) Single Pulsed Avalanche Energy (Note 3) MOSFET dv/dt ruggedness Reverse diode dv/dt TC=25℃ TC=100℃ ID IDM EAS dv/dt Power Dissipation TC=25℃ PD Thermal Resistance, Junction- to-Ambient (Note 4) RθJA Thermal Resistance, Junction- to-Case RθJC Operating and Storage Temperature Range TJ, Tstg Notes: 1. The max drain current limited by maximum junction temperature 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 10 mH, VDD = 150V, IAS = 4A, RG = 25 Ω, Starting TJ = 25 °C 4.
