Kexin Electronics 2KK5116
N-Channel MOSFET
FEATURES
● VDSS = 100V● ID = 53A
● RDS(ON) < 13mΩ @ VGS=10V
● RDS(ON) < 17mΩ @ VGS=4.5V
● Low RDS(ON)
● 100% UIS Tested N-Channel MOSFET 2KK5116 TO-252 MOSFET D S G 1. Gate (G) 2. Drain (D) 3. Source (S)
●
ABSOLUTE MAXIMUM RATINGS
(TA=25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current (Note 1) TC = 25℃ ID TC = 100℃ Pulsed Drain Current (Note 2) IDM Single Pulse Avalanche Energy (Note 3) EAS Thermal Resistance, Junction-to-Ambient (Note 4) RθJA Thermal Resistance, Junction-to-Case RθJC Maximum Power Dissipation TC = 25℃ PD Operating Junction and Storage Temperature Range TJ,Tstg Notes 1. The max drain current rating is silicon limited 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 0.5 mH, VDD = 50 V, IAS = 16 A, RG = 25 Ω, Starting TJ = 25 °C 4. Mount on minimum PCB layout Rating 100 ±20 53 33 212 64 55 1.9 65 -55 to 150 Unit V A mJ ℃/W W ℃ 1 SMD Type 2KK5116 MOSFET● Electrical Chara...