Datasheet4U Logo Datasheet4U.com

2KK5117 - N-Channel MOSFET

Key Features

  • s.
  • VDS = 30 V.
  • ID (at VGS=10V) = 20 A.
  • RDS(ON) (at VGS = 10 V) < 5.3 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 9 mΩ.
  • 100% EAS Guaranteed.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline D +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TA = 25.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2KK904 N-Channel Silicon Power MOS FET Fuji Semiconductors

Other Datasheets by Kexin Semiconductor

Part Number Description
2KK5113 N-Channel MOSFET
2KK5115DFN N-Channel MOSFET
2KK5116 N-Channel MOSFET
2KK5100DFN N-Channel MOSFET
2KK5102DFN N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET 2KK5117 ■ Features ● VDS = 30 V ● ID (at VGS=10V) = 20 A ● RDS(ON) (at VGS = 10 V) < 5.3 mΩ ● RDS(ON) (at VGS = 4.5 V) < 9 mΩ ● 100% EAS Guaranteed ● Super Low Gate Charge ● Excellent CdV/dt effect decline D +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TA = 25℃ 20 Continuous Drain Current (Note 1) ID TA = 70℃ 15 Pulsed Drain Current (Note 2) IDM 65 Avalanche Current IAS 46 Avalanche Energy (Note 3) EAS 105.