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2PB710A - PNP General Purpose Transistor

Key Features

  • High current (max. 500 mA) Low voltage (max. 50 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A Peak base current IBM -200 mA Total power dissipation Tamb 25 ;.
  • Ptot 250 mW Storage temperatu.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TransistIoCrs PNP General Purpose Transistor 2PB710A Features High current (max. 500 mA) Low voltage (max. 50 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A Peak base current IBM -200 mA Total power dissipation Tamb 25 ; * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. 0-0.