2PB710A Datasheet | NXP Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 50 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION PNP transistor in an SC-59 plastic package. NPN plement: 2PD602A. MARKING TYPE NUMBER 2PB710AQ 2PB710AR 2PB710AS MARKING CODE DQ DR DS 3 1 2 MAM322 1 Top view Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 60 - 50 - 5 - 500 - 1 - 200 250 +150 150 +150 V V V m A A m A m W °C °C °C UNIT 1999 May 31 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PB710AQ 2PB710AR 2PB710AS DC current gain VCEsat VBEsat Cc f T base-emitter saturation voltage collector capacitance transition frequency 2PB710AQ 2PB710AR 2PB710AS Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IC = - 500 m A; VCE = - 10 V; note 1 IC = - 300 m A; IB = - 30 m A; note 1 IE = ie = 0; VCB = - 10 V; f = 1 MHz IC = - 50 m A; VCE = - 10 V; f = 100 MHz; note 1 collector-emitter saturation voltage IC = - 300 m A; IB = - 30 m A; note 1 CONDITIONS IE = 0; VCB = - 60 V IE = 0; VCB...