Kexin Electronics 2SA1338
PNP Epitaxial Planar Silicon Transistors
| Part No. | 2SA1338 |
|---|---|
| Datasheet | 2SA1338 Download |
| Manufacturer | Kexin Electronics |
| Description | PNP Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
FEATURES
Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim.● Complementary to 2SC3392
ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperatureELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Turn-on time Storage time Fall time Common base output capacitance Transition frequency SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Symbol VC...
