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2SA1338 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim.
  • Complementary to 2SC3392 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Electrical Characteristics Ta = 25 Parameter Collector- base breakdown voltage Collec.

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SMD Type TransistIoCrs PNP Transistors 2SA1338 Features Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim.