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2SA1338 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET process.
  • High breakdown voltage : VCEO=(.
  • )50V.
  • Large current capacitiy and high fT.
  • Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time Test Circuit ( ) : 2SA1338 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Ba.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small- sized, slim.