Kexin Electronics 2SA1575
Transistor
APPLICATIONS
2SA1575FEATURES
High fT.. High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process.ABSOLUTE MAXIMUM RATINGS
TA=25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector current (pulse) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC 1.3 Tj Tstg 150 -55 to +150 W Rating -200 -200 -4 -100 -200 500 Unit V V V mA mA mW 1 Free Datasheet SMD Type Transistors Diodes Wide-Band AmplifierAPPLICATIONS
2SA1575ELECTRICAL CHARACTERISTICS
TA=25 Parameter Collector-base Breakdown voltage Collector-emitter Breakdown voltage Emitter-base Breakdown voltage Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance (Common...