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2SA1766 - PNP Transistors

Key Features

  • s.
  • Adoption of FBET, MBIT processes.
  • High DC current gain (hFE=500 to 1200).
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • High VEBO. 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Collector - Base Voltage VCBO Collector - Emitter Voltage VCEO Emitter - Base Voltage VEBO Collector Current - Continuous IC Collector Current - Pulse ICP Base Current IB Collector.

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SMD Type PNP Transistors 2SA1766 Transistors ■ Features ● Adoption of FBET, MBIT processes. ● High DC current gain (hFE=500 to 1200). ● Large current capacity. ● Low collector-to-emitter saturation voltage. ● High VEBO. 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Collector - Base Voltage VCBO Collector - Emitter Voltage VCEO Emitter - Base Voltage VEBO Collector Current - Continuous IC Collector Current - Pulse ICP Base Current IB Collector Power Dissipation (Note.1) PC Junction Temperature TJ Storage Temperature range Tstg Note.1: Mounted on ceramic board (250mm 2 X 0.8mm) Rating -30 -25 -15 -300 -500 -60 1.