2SA1766
2SA1766 is PNP Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- Adoption of FBET, MBIT processes.
- High DC current gain (h FE=500 to 1200).
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- High VEBO.
Package Dimensions unit:mm 2038
[2SA1766]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 f T Cob VCE(sat) VBE(sat)
VCB=- 20V, IE=0 VEB=- 10V, IC=0 VCE=- 5V, IC=- 10m A VCE=- 5V, IC=- 200m A VCE=- 10V, IC=- 10m A VCB=- 10V, f=1MHz IC=- 200m A, IB=- 4m A IC=- 200A, IB=- 4m A
E : Emitter C : Collector B : Base
SANYO : PCP (Bottom view)
Ratings
Unit
- 30 V
- 25 V
- 15 V
- 300 m A
- 500 m A
- 60 m A
1.3 W
150 ˚C
- 55 to +150 ˚C
Ratings min typ
500 800...
