Kexin Electronics 2SA1813
PNP Transistors
| Part No. | 2SA1813 |
|---|---|
| Datasheet | 2SA1813 Download |
| Manufacturer | Kexin Electronics |
| Description | PNP Transistors |
| Buy | Stock & Price |
FEATURES
● High DC current gain (hFE=500 to 1200).● Low collector-to-emitter saturation voltage
● High VEBO 1 Base 2 Emitter 3 Colletor
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector Current - Continuous Collector Current - Pulse IC -150 mA ICM -300 Collector Power Dissipation PC 200 mW Junction Temperature Storage Temperature range TJ 150 ℃ Tstg -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA， RBE=∞ VEBO IE= -100 u A， IC=0 ICBO VCB= -20 V , IE=0 IEBO VEB= -10V , IC=0 VCE(sat) IC=-50mA, IB=-1m...
