Sanyo Electric 2SA1813
PNP Epitaxial Planar Silicon Transistor
| Part No. | 2SA1813 |
|---|---|
| Datasheet | 2SA1813 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer.● Adoption of FBET process.
● High DC current gain (hFE=500 to 1200).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
● High VEBO (VEBO≥15V). Package Dimensions unit:mm 2059A [2SA1813] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Mounted on board Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : KS Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–20V, IE=0 VEB=–10V, IC=0 VCE=–5V, IC=–1mA VCE=–...
