2SA1971 Datasheet | Kexin Semiconductor

Features - Collector Current Capability IC=-0.5A - Collector Emitter Voltage VCEO=-400V - Marking: A- L 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Base Current Symbol VCBO VCEO VEBO IC ICP IB Collector Power Dissipation (Note.1) Junction Temperature Storage Temperature range Tstg Note.1: mounted on ceramic substrate (250mm2X0.8t) Rating -400 -400 -7 -0.5 -1 -0.25 500 1 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -10 m A， IB=0 VEBO IE= -100μA， IC=0 ICBO VCB= -400 V , IE=0 IEBO VEB= -7V , IC=0 VCE(sat) IC=-100 m A, IB=-10m A VBE(sat) IC=-100 m A, IB=-10m...