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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1971
High-Voltage Switching Applications
2SA1971
Unit: mm
• High breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C
Ta = 25°C (Note 1)
VCBO VCEO VEBO
IC ICP IB
PC
−400
V
−400
V
−7
V
−0.5 A
−1
−0.25
A
500
mW 1000
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate 250 mm2 × 0.8 t
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g.
2SA1971 Datasheet
