Datasheet4U Logo Datasheet4U.com

2SB1115A - Transistor

Key Features

  • World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse).
  • Total power dissipation Junction temperature Storage temperature range.
  • Pulsed: PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -80 -60 -6 -1 -2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Coll.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type PNP Silicon Epitaxial Transistor 2SB1115A Transistors Features World standard miniature package. Low VCE(sat): VCE(sat)=-0.