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2SB1176 Datasheet PDF

Kexin Electronics 2SB1176

Silicon PNP epitaxial planar type Transistor

Part No. 2SB1176
Datasheet 2SB1176 Download
Manufacturer Kexin Electronics
Description Silicon PNP epitaxial planar type Transistor
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2SB1176 datasheet page 1 preview

FEATURES

Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC. 6.50 +0.2 5.30-0.2 +0.15 -0.15 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -130 -80 -7 -5 -10 1.3 150 -55 to +150 Unit V V V A A W

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector-emitter voltage Collector-emitter cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency...