Panasonic 2SB1176
PNP Transistor
| Part No. | 2SB1176 |
|---|---|
| Datasheet | 2SB1176 Download |
| Manufacturer |  Panasonic |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage VCE(sat)● Satisfactory linearity of forward current transfer ratio hFE
● Large collector current IC
● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 0.9±0.1 0˚ to 0.15˚
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 15 1.3 150 −55 to +150 °C °C Unit V V V A A W 1 2 3 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared.●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Collecto...
