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2SB1295 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Large current capacity. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 smaller and slimer. 0.55 Very small-sized package permitting sets to be made +0.1 1.3-0.1 Low collector to emitter saturation voltage. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction tempe.

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SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB1295 SOT-23 Unit: mm Features Large current capacity. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 smaller and slimer. 0.55 Very small-sized package permitting sets to be made +0.1 1.3-0.1 Low collector to emitter saturation voltage. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -15 -15 -5 -0.