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2SB1396 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) Collector dissipation.
  • Junction temperature Storage temperature.
  • Mounted on ceramic PCB (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC.
  • Tj Tstg Rating -15 -10 -7 -3 -5 1.3 150 -55 to +150 Unit V V V A A W Electrical Charac.

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) Collector dissipation * Junction temperature Storage temperature * Mounted on ceramic PCB (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -15 -10 -7 -3 -5 1.