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2SB1396 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic PCB (250mm2×0.