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2SB1427 - Power Transistor

Key Features

  • Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature.
  • Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP.
  • PC Tj Tstg Rating -20 -20 -6 -2 -3 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristi.

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SMD Type Power Transistor 2SB1427 Transistors Features Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -20 -20 -6 -2 -3 0.