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2SB1427W6 - PNP Transistor

Key Features

  • Silicon PNP epitaxial type.
  • Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA.
  • High collector current capability.
  • Excellent DC current gain characteristics.
  • Lead free in compliance with EU RoHS 2011/65/EU directive.
  • Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data.
  • Case: SOT-23 6L-1 Package.
  • Terminals : Solderable per MIL-STD-750, Method 2026.
  • Approx. Weight: 0.0005 ounces, 0.014 grams.
  • Marking: B27 SOT-23 6L-1 Unit: inch(.

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Full PDF Text Transcription (Reference)

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P2SB1427W6 PNP Low Vce(sat) Transistor Voltage 20V Current 3A Features  Silicon PNP epitaxial type  Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.