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2SC2223 - NPN Silicon Epitaxial Transistor

Key Features

  • 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 4 20 150 125 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Base-emitter.

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SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High gain bandwidth product fT=600MHz TYP Low output capacitance. Cob=1.0PF TYP 0.55 Micro package. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.