2SC2220 - SILICON NPN TRANSISTOR

Toshiba

Download the 2SC2220 datasheet PDF. This datasheet also covers the 2SC2204 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

:.
High Voltage : VCEO=400V(Min. ) (2SC2204) V CEO =300V(Min. )(2SC2220) VcBO=800V(Min. )(2SC2204) VcBO=500V(Min. )(2SC2220).
High Speed Switching : tf=0. 7ys (Typ. 034.0 031.0 r . _. i I .03.0 1 Unit in mm 02.3±O. 2 J 4.5±0.5.

📥 Download Datasheet

2SC2220 silicon npn transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SC2204-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SC2220
Manufacturer	Toshiba
File Size	41.09 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC2220 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SC2200	SILICON NPN TRANSISTOR
2SC2204	SILICON NPN TRANSISTOR
2SC2215	SILICON NPN TRANSISTOR
2SC2230A	Silicon NPN Triple Diffused Type Transistor
2SC2231	SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

) SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC2204 2SC2220 HIGH POWER SWITCHING APPLICATIONS. HIGH FREQUENCY INVERTOR APPLICATIONS. FEATURES : • High Voltage : VCEO=400V(Min. ) (2SC2204) V CEO =300V(Min.)(2SC2220) VcBO=800V(Min.)(2SC2204) VcBO=500V(Min.)(2SC2220) • High Speed Switching : tf=0. 7ys (Typ. 034.0 031.0 r ._. i I .03.0 1 Unit in mm 02.3±O. 2 J 4.5±0.5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC2204 2SC2220 'CBO Collector-Emitter 2SC2204 Voltage 2SC2220 'CEO RATING 800 500 400 300 Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 'EBO L stg 30 -30 15 250 150 -65vL50 UNIT 1. BASE 2.