• Part: 2SC2200
  • Description: SILICON NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 89.96 KB
Download 2SC2200 Datasheet PDF
Toshiba
2SC2200
2SC2200 is SILICON NPN TRANSISTOR manufactured by Toshiba.
FEATURES - Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max. - High Collector Breakdown Voltage : V CEO=400V INDUSTRIAL APPLICATIONS Unit in mm 01&5 t Ql m+C.12 014.0-0.10 j Zfl O^Q05 24.38- 0.05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL v CBO RATING UNIT 500 V Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature VEBO IB PC 40 150 1. BASE 2. EMITTER COLLECTOR (HEAT SINK) Storage Temperature Range T stg -65^150 °C TOSHIBA 2- 14A1A ELECTRICAL CHARACTERISTICS (Ta==25°0 Mounting Kit No. AC74 Weight : 7. 6g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown...