Datasheet4U Logo Datasheet4U.com

2SC2200 - SILICON NPN TRANSISTOR

Key Features

  • Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max.
  • High Collector Breakdown Voltage : V CEO=400V.

📥 Download Datasheet

Datasheet Details

Part number 2SC2200
Manufacturer Toshiba
File Size 89.96 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC2200 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE 2SC2200 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES • Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max. • High Collector Breakdown Voltage : V CEO=400V INDUSTRIAL APPLICATIONS Unit in mm 01&5 tQl m+C.12 014.0-0.10 jZflO^Q05 24.38- 0.05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL v CBO RATING UNIT 500 V Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature VEBO IB PC 40 150 1. BASE 2. EMITTER COLLECTOR (HEAT SINK) Storage Temperature Range T stg -65^150 °C TOSHIBA 2- 14A1A ELECTRICAL CHARACTERISTICS (Ta==25°0 Mounting Kit No.