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2SC2411K - Medium Power Transistor

Key Features

  • +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current.
  • Collector power dissipation Junction temperature Storage temperature.
  • PC must not be exceeded. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 32 5 0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Co.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Medium Power Transistor 2SC2411K SOT-23 Transistors Unit: mm High ICMax. ICMax. = 0.5A +0.1 2.4-0.1 Low VCE(sat). Optimal for low voltage operation. NPN silicon transistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current * Collector power dissipation Junction temperature Storage temperature * PC must not be exceeded. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 32 5 0.5 0.