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2SC2411K
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC PD Tj Tstg
Value
32 40 5.0 500 200 +150 -55 to +150
Unit
V V V mA mW °C °C
WEITRON
http://www.weitron.com.tw
1/5
22-May-08
Free Datasheet http://www.datasheet4u.com/
2SC2411K
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Emitter Breakdown Voltage IC = 1mA, I B = 0 Collector-Base Breakdown Voltage IC = 100µA, I E = 0 Emitter-Base Breakdown Voltage IE= 100µA, IC=0 VCB = 20V, I E = 0 VEB = 4V, I C = 0
Symbol
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
Min
32 40 5.0 -
Typ
-
Max
1.
2SC2411K Datasheet
