Datasheet4U Logo Datasheet4U.com

2SC2714 - Silicon NPN Transistor

Key Features

  • 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 40 30 4 20 4 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC c.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2714 Silicon NPN Transistor Toshiba Semiconductor
2SC2714 Silicon Transistor GME
2SC2714 NPN Transistors Weitron
2SC2714 NPN Transistor SeCoS
2SC2714 TRANSISTOR Jin Yu Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SC2712 Silicon NPN Transistor
2SC2713 Silicon NPN Transistor
2SC2715 NPN Transistor
2SC2716 Silicon NPN Epitaxial Type Transistor
2SC2732 Silicon NPN Epitaxial Type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Silicon NPN Epitaxial 2SC2714 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.