Datasheet4U Logo Datasheet4U.com

2SC2859 - Silicon NPN Transistor

Key Features

  • 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 50 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC cu.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2859 Silicon NPN Transistor Toshiba Semiconductor
2SC2859 Silicon Transistor GME
2SC2859 NPN Transistor SeCoS
2SC2859 TRANSISTOR Jin Yu Semiconductor
2SC2859-GR NPN Transistors MCC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SC2873 Silicon PNP Transistor
2SC2880 Transistor
2SC2881 Transistor
2SC2882 Transistor
2SC2883 Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.