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2SC2859 - Silicon Transistor

Key Features

  • Power dissipation：PC=150mW.
  • Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).
  • Complementary to 2SA1182. Pb Lead-free.

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Silicon Epitaxial Planar Transistor FEATURES  Power dissipation：PC=150mW.  Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).  Complementary to 2SA1182. Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 35 V 30 V 5V 500 mA 150 mW -55 to +125 ℃ C100 Rev.A www.gmesemi.