Galaxy Century Microelectronics 2SC2859
Silicon Transistor
| Part No. | 2SC2859 |
|---|---|
| Datasheet | 2SC2859 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Power dissipation：PC=150mW.● Excellent hFE linearity:hFE(2)=25 (VCE=6V,IC=400mA).
● Complementary to 2SA1182. Pb Lead-free
APPLICATIONS
● Audio frequency general purpose amplifier applications. Production specification 2SC2859 SOT-23 ORDERING INFORMATION Type No. 2SC2859 Marking WO/WY/WG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 35 V 30 V 5V 500 mA 150 mW -55 to +125 ℃ C100 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SC2859ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emit
