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2SC2859
TOSHIBA Transistor Silicon NPN Epitaxial (PCT process)
2SC2859
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
Unit: mm
• Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
• Complementary to 2SA1182.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
Rating
Unit
VCBO VCEO VEBO
IC IB PC Tj Tstg
35
V
30
V
5
V
500
mA
50
mA
150
mW
125
°C
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SC2859 Datasheet
