Kexin Electronics 2SC2946
NPN Silicon Epitaxial Transistor
FEATURES
High Votage VCEO=200V +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High speed tf ìs 1 Base 2 Collector 3 EmitterABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current *1 Total Power dissipation Ta = 25 Junction temperature Storage temperature *1 PW 10ms, Duty cycle 50% *2 Symbol VCBO VCEO VEBO ICP IC PT Tj Tstg Rating 330 200 7 2 4 2 150 -55 to +150 Unit V V V A A W *2 when mounted on ceramic substrate of 7.5cm2X0.7mm 3 .8 0 1 Free Datasheet SMD Type 2SC2946ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter collector cutoff current emitter cutoff current DC current Gain * Collector Saturation Voltage * Base Satruation Voltage * Turn-on Time Storage Time Fall Time * Pulsed:PW 350ìs,Duty Cycle 2% Symbol ICBO IEBO hFE VCE(sat) VBE(sat) ton tstg tf see Test circuit Testconditons VCB=250...