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2SC2946 - NPN Silicon Epitaxial Transistor

Key Features

  • High Votage VCEO=200V +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High speed tf ìs 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current.
  • 1 Total Power dissipation Ta = 25 Junction temperature Storage temperature.
  • 1 PW 10ms, Duty cycle 50%.
  • 2.

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Full PDF Text Transcription (Reference)

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SMD Type NPN Silicon Epitaxial Transistor 2SC2946 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High Votage VCEO=200V +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High speed tf ìs 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current *1 Total Power dissipation Ta = 25 Junction temperature Storage temperature *1 PW 10ms, Duty cycle 50% *2 Symbol VCBO VCEO VEBO ICP IC PT Tj Tstg Rating 330 200 7 2 4 2 150 -55 to +150 Unit V V V A A W *2 when mounted on ceramic substrate of 7.