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2SC3011 - Silicon NPN Epitaxial Transistor

Key Features

  • +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: NF=2.3dB(Typ. ) f=1GHz +0.1 1.3-0.1 High Gain :|S21e|2=12dB(TYP. ) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30.

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SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: NF=2.3dB(Typ.) f=1GHz +0.1 1.3-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.