Toshiba 2SC3011
Silicon NPN epitaxial planer Transistor
| Part No. | 2SC3011 |
|---|---|
| Datasheet | 2SC3011 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN epitaxial planer Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High gain: |S21e|2 = 12dB (typ.)
● Low noise figure: NF = 2.3dB (typ.), f = 1 GHz
● High fT: fT = 6.5 GHz
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol fT ïS21eï2 NF Test Condition VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit ¾ 6.5 ¾ GHz ¾ 12 ¾ dB ¾ 2.3 ¾ dBELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation vol...
